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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 4369 Displaying: 3321 - 3340| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 3321. | 2-2WI-1000S-16 | 1600 V, 1100 A, 8.8 kA water cooled A.C.switch | POSEI | - | 2 | - | - | 108K | | 3322. | C460-XB290-E1000-A | 15.0mW; color:deep blue; 3.7-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3323. | C460-XB290-E1000-B | 14.0mW; color:blue; 3.7-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3324. | C470-XB290-E1000-A | 14.0mW; color:blue; 3.7-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3325. | C470-XB290-E1000-B | 14.0mW; color:blue; 3.7-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3326. | C505-XB290-E1000-A | 11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3327. | C505-XB290-E1000-B | 11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3328. | C527-XB290-E1000-A | 9.0mW; color:green; 3.8-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3329. | C527-XB290-E1000-B | 9.0mW; color:green; 3.8-4.0V; Xbright InGaN LED | CREE | - | - | - | - | 344K | | 3330. | KBPC10005 | 50 V, 10 A single-phase silicon bridge | HONEY | - | 4 | -55°C | 125°C | 215K | | 3331. | NTE5000A | Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.4V, Zener test current Izt = 20mA. | NTE | DO35 | 2 | -65°C | 200°C | 26K | | 3332. | W4NRD0X-0000 | Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3333. | W4NXD8C-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3334. | W4NXD8D-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3335. | W4NXD8G-0000 | Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3336. | W6NXD0K-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3337. | W6NXD0KLSR-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3338. | W6NXD3J-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3339. | W6NXD3K-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K | | 3340. | W6NXD3L-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K |
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