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W6NXD3K-0000 Datasheet |  | | Description: | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | | Manufacturer: | CREE | | Temp. range: | Min: - | Max: - | | Package: | Not available... | | Pins: | - | | Datasheet: | W6NXD3K-0000.PDF (279Kb) |
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| # | Component part name | Component Description | Manufacturer | PDF size | | 1. | W6NXD3K-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | 279K |
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W6NXD3K-0000.PDF
W6NXD3K-0000 DatasheetDiameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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