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Found: 107 Displaying: 61 - 80| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 61. | 2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K | | 62. | 2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | USHA | TO-3 | 3 | -65°C | 200°C | 48K | | 63. | 2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K | | 64. | DT3055 | 60V; N-channel enchancement mode field effect transistor | DIODS | SOT-223 | 4 | -65°C | 150°C | 73K | | 65. | DT3055L | 60V; N-channel enchancement mode field effect transistor | DIODS | SOT-223 | 4 | -65°C | 150°C | 73K | | 66. | EM83055H | Keyboard encoder | EMC | - | 39 | 0°C | 70°C | 197K | | 67. | HI3055 | Emitter to base voltage:5V 10A NPN epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-251 | 3 | - | - | 21K | | 68. | HJ3055 | Emitter to base voltage:5V 10A NPN epitaxial planar transistor for general purpose of amplifier and switching appications | HSMC | TO-252 | 3 | - | - | 32K | | 69. | HMJE3055T | Emitter to base voltage:5V; 10A PNP epitaxial planar transistor for general purpose of amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 35K | | 70. | MJE3055T | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. | USHA | TO-220 | 3 | -65°C | 150°C | 48K | | 71. | NTE3055 | Yellow 0.3 inch single digit numeric display, seven segment, common anode. | NTE | - | 14 | -25°C | 85°C | 23K | | 72. | P3055LD | 25V; 12A N-channel logic level enhancement mode field effect transistor | NIKO | SOP | 3 | -55°C | 150°C | 214K | | 73. | P3055LL | 25V; 6A N-channel logic level enhancement mode field effect transistor | NIKO | SOT-223 | 3 | -55°C | 150°C | 217K | | 74. | P3055LL | 25V; 12A N-channel logic level enhancement mode field effect transistor | NIKO | TO-263 | 3 | -55°C | 150°C | 215K | | 75. | PHD3055E | 55 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 175°C | 103K | | 76. | PHD3055L | 60 V, power MOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 55K | | 77. | PHP3055E | 55 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 175°C | 103K | | 78. | PHP3055L | 60 V, power MOS transistor logic level FET | PHLPS | TO | 3 | -55°C | 175°C | 52K | | 79. | PHX3055E | 55 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 150°C | 96K | | 80. | TIP3055 | NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K |
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