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MJE3055T Datasheet | | Description: | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. | Manufacturer: | USHA | Temp. range: | Min: -65°C | Max: 150°C | Package: | TO-220 | Pins: | 3 | Datasheet: | MJE3055T.PDF (48Kb) |
Related datasheets for MJE3055T:Lower in the list you can see the relative results of searching, which resembling the inquiring. If there is no necessary name in the results of searching for MJE3055T – look at the relative results.
# | Component part name | Component Description | Manufacturer | PDF size | 1. | MJE3055T | NPN Silicon Transistor | FAIR | 36K | 2. | MJE3055T | 60V complementary silicon power transistor | MOSP | 123K | 3. | MJE3055T | Complementary silicon plastic power transistor | MOT | 129K | 4. | MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS | STM | 65K | 5. | MJE3055T | NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. | USHA | 48K | 6. | MJE3055T | Silicon epitaxial planar transistor, for use in audio and general purpose. | WINGS | 64K |
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| MJE3055T.PDF
MJE3055T DatasheetSilicon epitaxial planar transistor, for use in audio and general purpose.
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