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IRG4BC10SD-L Datasheet

 Datasheet for International Rectifier
Description:Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Manufacturer:International Rectifier
Temp. range:Min: -55°C | Max: 150°C
Package:TO-262
Pins:3
Datasheet:IRG4BC10SD-L.PDF (217Kb)


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1.
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
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IRG4BC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC10SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC10SD-L.PDF


IRG4BC10SD-L Datasheet

IRG4BC10SD-L Datasheet

Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A

IRG4BC10SD-L Datasheet

 
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