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K4R271869B-MCK7 Datasheet |  | | Description: | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | | Manufacturer: | Samsung Electronic | | Temp. range: | Min: 0°C | Max: 100°C | | Package: | microBGA(mirrored CS | | Pins: | 54 | | Datasheet: | K4R271869B-MCK7.PDF (306Kb) |
Related datasheets for K4R271869B-MCK7:Lower in the list you can see the relative results of searching, which resembling the inquiring. If there is no necessary name in the results of searching for K4R271869B-MCK7 – look at the relative results.
| # | Component part name | Component Description | Manufacturer | PDF size | | 1. | K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | SMSNG | 306K | | 2. | K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | SMSNG | 306K | | 3. | K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | SMSNG | 306K | | 4. | K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | SMSNG | 306K | | 5. | K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | SMSNG | 306K | | 6. | K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | SMSNG | 306K |
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K4R271869B-MCK7.PDF
K4R271869B-MCK7 Datasheet256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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