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K4E171611D-J Datasheet | | Description: | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Manufacturer: | Samsung Electronic | Temp. range: | Min: 0°C | Max: 70°C | Package: | SOJ | Pins: | 42 | Datasheet: | K4E171611D-J.PDF (553Kb) |
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# | Component part name | Component Description | Manufacturer | PDF size | 1. | K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | SMSNG | 553K | 2. | K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | SMSNG | 553K | 3. | K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | SMSNG | 553K | 4. | K4E171612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | SMSNG | 553K | 5. | K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | SMSNG | 553K | 6. | K4E171612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | SMSNG | 553K |
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| K4E171611D-J.PDF
K4E171611D-J Datasheet1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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