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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
101. | D1001UK | 28V, 20W, 1MHz-175MHz single-edded RF | SAMEL | DA | - | - | - | 43K |
102. | HN58C1001FP-15 | 1M EEPROM (128-kword x 8) ready/busy and RES function | HIT | plastic SOP | 32 | 0°C | 70°C | 117K |
103. | HN58C1001P-15 | 1M EEPROM (128-kword x 8) ready/busy and RES function | HIT | plastic DIP | 32 | 0°C | 70°C | 117K |
104. | HN58C1001T-15 | 1M EEPROM (128-kword x 8) ready/busy and RES function | HIT | plastic TSOP | 32 | 0°C | 70°C | 117K |
105. | HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | HIT | plastic SOP | 32 | 0°C | 70°C | 119K |
106. | HN58V1001P-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | HIT | plastic DIP | 32 | 0°C | 70°C | 119K |
107. | HN58V1001T-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | HIT | plastic TSOP | 32 | 0°C | 70°C | 119K |
108. | IS61VPD10018-166B | 1024K x 18 synchronous pipeline, double-cycle deselect static RAM | ISSI | PBGA | 119 | 0°C | 70°C | 166K |
109. | IS61VPD10018-166BI | 1024K x 18 synchronous pipeline, double-cycle deselect static RAM | ISSI | PBGA | 119 | -40°C | 85°C | 166K |
110. | IS61VPD10018-200B | 1024K x 18 synchronous pipeline, double-cycle deselect static RAM | ISSI | PBGA | 119 | 0°C | 70°C | 166K |
111. | PRN10116N1001J | Bussed resistor network | CAMD | SOIC | 16 | 0°C | 70°C | 51K |
112. | PRN110161001J | Isolated resistor termination network | CAMD | QSOP | 16 | -55°C | 125°C | 126K |
113. | PRN110241001J | Isolated resistor termination network | CAMD | QSOP | 24 | -55°C | 125°C | 126K |
114. | PRN111161001J | Bussed resistor network | CAMD | QSOP | 16 | 0°C | 70°C | 51K |
115. | PRN111241001J | Bussed resistor network | CAMD | QSOP | 16 | 0°C | 70°C | 51K |
116. | PTF10015 | 50 watts, 300-960 MHz GOLDMOS field effect transistor | ERSON | 20235 | 2 | - | - | 221K |
117. | PTF10019 | 70 watts, 860-960 MHz GOLDMOS field effect transistor | ERSON | 20237 | 4 | - | - | 322K |
118. | SML1001R1AN | 1000V Vdss N-Channel FET (field effect transistor) | SAMEL | TO3 | - | - | - | 60K |
119. | SML1001R3AN | 1000V Vdss N-Channel FET (field effect transistor) | SAMEL | TO3 | - | - | - | 60K |
120. | SML1001RHN | 1000V Vdss N-Channel FET (field effect transistor) | SAMEL | TO258 | - | - | - | 18K |