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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | NTE5810 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 62. | NTE5857 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 63. | NTE5859 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 64. | NTE5863 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 65. | NTE5864 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 66. | NTE5865 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 67. | NTE5867 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 68. | NTE5869 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 69. | NTE5872 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 70. | NTE5874 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 71. | NTE5876 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 72. | NTE5878 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 73. | NTE5880 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 74. | NTE5882 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 75. | NTE5884 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 76. | NTE5885 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 600V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 77. | NTE5888 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 1200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 78. | NTE5889 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 1200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 79. | NTE5889 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 1200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 80. | NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
