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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | NTE584 | Silicon schottky diode. Repetitive peak reverse voltage Vrrm = 20V. Forward continuous current If = 35mA. | NTE | DO35 | 2 | -65°C | 200°C | 15K |
| 42. | NTE584 | Silicon schottky diode. Repetitive peak reverse voltage Vrrm = 20V. Forward continuous current If = 35mA. | NTE | DO35 | 2 | -65°C | 200°C | 15K |
| 43. | NTE5849 | Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 1000V. | NTE | DO4 | 2 | -65°C | 175°C | 18K |
| 44. | NTE585 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A. | NTE | - | 2 | -65°C | 125°C | 15K |
| 45. | NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 46. | NTE5851 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 47. | NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 48. | NTE5853 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 49. | NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 50. | NTE5856 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 51. | NTE5858 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 52. | NTE586 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 3.0A. | NTE | - | 2 | -65°C | 125°C | 15K |
| 53. | NTE5860 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 54. | NTE5862 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 55. | NTE5866 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 56. | NTE5868 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 57. | NTE587 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.0A. | NTE | DO41 | 2 | -65°C | 150°C | 15K |
| 58. | NTE588 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. | NTE | - | 2 | -65°C | 150°C | 15K |
| 59. | NTE588 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. | NTE | - | 2 | -65°C | 150°C | 15K |
| 60. | NTE589 | Silicon rectifier, general purpose, fast recovery. Max reccurent peak reverse voltage 400V. Max average forward rectified current 6.0A. | NTE | - | 2 | -50°C | 125°C | 15K |
