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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 50N035S | 30V 52A N-channel field effect transistor | BAYLI | TO-263 | 3 | 0°C | 150°C | 34K |
| 42. | 50N035T | 30V 52A N-channel field effect transistor | BAYLI | TO-220 | 3 | 0°C | 150°C | 34K |
| 43. | FQB50N06 | 60V N-Channel MOSFET | FAIR | - | - | - | - | 648K |
| 44. | FQB50N06L | 60V LOGIC N-Channel MOSFET | FAIR | - | - | - | - | 654K |
| 45. | MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 289K |
| 46. | MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 289K |
| 47. | OM50N05SA | 60V ultra low power MOSFET | OMNI | TO-254AA | 3 | -55°C | 150°C | 60K |
| 48. | OM50N05ST | 50V ultra low power MOSFET | OMNI | TO-257AA | 3 | -55°C | 150°C | 60K |
| 49. | OM50N06SA | 60V ultra low power MOSFET | OMNI | TO-254AA | 3 | -55°C | 150°C | 60K |
| 50. | OM50N06ST | 60V ultra low power MOSFET | OMNI | TO-257AA | 3 | -55°C | 150°C | 60K |
| 51. | P50N02LD | 25V; 55A N-channel logic level enhancement mode field effect transistor | NIKO | TO-252 | 3 | -55°C | 150°C | 44K |
| 52. | P50N02LS | 25V; 55A N-channel logic level enhancement mode field effect transistor | NIKO | TO-263 | 3 | -55°C | 150°C | 45K |
| 53. | PHB50N03LT | 25 V, N-channel trenchMOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 111K |
| 54. | PHB50N06LT | 55 V, TrenchMOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 55K |
| 55. | PHD50N03LT | 25 V, N-channel trenchMOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 111K |
| 56. | PHD50N03LT | 25 V, N-channel trenchMOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 111K |
| 57. | PHD50N06LT | 55 V, trenchMOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 65K |
| 58. | PHP50N06 | 60 V, power MOS transistor | PHLPS | TO | 3 | - | - | 54K |
| 59. | PHP50N06LT | 55 V, trenchMOS transistor logic level FET | PHLPS | SOT | 3 | -55°C | 175°C | 65K |
| 60. | STE250N06 | Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV | STM | - | - | - | - | 330K |
