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Found: 545      Displaying: 201 - 220
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
201.
APL1001J1000V, 18A power MOS IV transistor
ADPOW
SOT-227
3
-55°C
150°C
37K
202.
APL1001P1000V, 18A, power MOS IV transistor
ADPOW
P-PACK
3
-55°C
150°C
115K
203.
APT1001RBLC1000V, 11A power MOS VI
ADPOW
TO-247
3
-55°C
150°C
35K
204.
APT1001RSLC1000V, 11A power MOS VI
ADPOW
D3PAK
3
-55°C
150°C
35K
205.
AS58C1001F-15/883C128K x 8 EEPROM memory
AUSTN
CFP
32
-55°C
125°C
255K
206.
AS58C1001F-15/IT128K x 8 EEPROM memory
AUSTN
CFP
32
-40°C
85°C
255K
207.
AS58C1001F-15/XT128K x 8 EEPROM memory
AUSTN
CFP
32
-55°C
125°C
255K
208.
AS58C1001F-15/XT128K x 8 EEPROM memory
AUSTN
CFP
32
-55°C
125°C
255K
209.
AS58C1001F-20/IT128K x 8 EEPROM memory
AUSTN
CFP
32
-40°C
85°C
255K
210.
AS58C1001F-20/XT128K x 8 EEPROM memory
AUSTN
CFP
32
-55°C
125°C
255K
211.
AS58C1001F-25/IT128K x 8 EEPROM memory
AUSTN
CFP
32
-40°C
85°C
255K
212.
CMPD1001High current switching diode
CENTR
SOT-23
3
-65°C
150°C
79K
213.
CMPD1001AHigh current switching diode
CENTR
SOT-23
3
-65°C
150°C
79K
214.
CMPD1001SHigh current switching diode
CENTR
SOT-23
3
-65°C
150°C
79K
215.
MGF1001BTTape carrier microwave power GaAs fet
MITS
GD-24
3
-
-
153K
216.
MJ10012600 V, NPN silicon power darlington transistor
BOCA
TO-3
2
-65°C
200°C
183K
217.
TDA1001BInterface and noise suppression circuit for FM receivers
PHLPS
DIP
16
-30°C
80°C
108K
218.
TDA1001BInterface and noise suppression circuit for FM receivers
PHLPS
DIP
16
-30°C
80°C
108K
219.
TDA1001BInterface and noise suppression circuit for FM receivers
PHLPS
DIP
16
-30°C
80°C
108K
220.
TDA1001BTInterface and noise suppression circuit for FM receivers
PHLPS
DIP
16
-30°C
80°C
108K
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