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irg4pc datasheet



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Found: 22      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
IRG4PC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
145K
2.
IRG4PC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
210K
3.
IRG4PC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
121K
4.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
5.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
6.
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
TO-247AC
3
-55°C
150°C
120K
7.
IRG4PC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
145K
8.
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
211K
9.
IRG4PC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
123K
10.
IRG4PC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
145K
11.
IRG4PC40FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
214K
12.
IRG4PC40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A
IRF
TO-247AC
3
-55°C
150°C
182K
13.
IRG4PC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A
IRF
TO-247AC
3
-55°C
150°C
143K
14.
IRG4PC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
TO-247AC
3
-55°C
150°C
148K
15.
IRG4PC40UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
TO-247AC
3
-55°C
150°C
245K
16.
IRG4PC40WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A
IRF
TO-247AC
3
-55°C
150°C
116K
17.
IRG4PC50Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39A
IRF
TO-247AC
3
-55°C
150°C
146K
18.
IRG4PC50KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.84V @ VGE = 15V, IC = 30A
IRF
TO-247AC
3
-55°C
150°C
115K
19.
IRG4PC50SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.28V @ VGE = 15V, IC = 41A
IRF
TO-247AC
3
-55°C
150°C
164K
20.
IRG4PC50UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
147K
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