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b606 datasheet
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Found: 15 Displaying: 1 - 15| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | CEB6060 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 510K | | 2. | CEB6060L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 516K | | 3. | CEB6060LR | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 534K | | 4. | CEB6060R | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 527K | | 5. | NDB6060L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V | FAIR | TO-263 | - | - | - | 361K | | 6. | OPB606A | Reflective object sensor | OPTEK | - | 4 | -40°C | 85°C | 225K | | 7. | OPB606B | Reflective object sensor | OPTEK | - | 4 | -40°C | 85°C | 225K | | 8. | OPB606C | Reflective object sensor | OPTEK | - | 4 | -40°C | 85°C | 225K | | 9. | SB606 | 800 V, 6.0 A silicon bridge | SURGE | SB | 4 | -65°C | 150°C | 90K | | 10. | VTB6061 | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 31K | | 11. | VTB6061B | Process photodiode. Isc = 35 microA, Voc = 420 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 31K | | 12. | VTB6061CIE | Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux. | PERK | TO-8 | 2 | -54°C | 50°C | 30K | | 13. | VTB6061J | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 33K | | 14. | VTB6061UV | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 3 | -40°C | 110°C | 33K | | 15. | VTB6061UVJ | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 3 | -40°C | 110°C | 32K |
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