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SS10 datasheet



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Found: 34      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
1SS106High frequency Schottky barrier diode for detection and mixer
HIT
DO-35
-
-
-
26K
2.
BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor
FAIR
-
-
-
-
284K
3.
BSS100N-channel SIPMOS small-signal transistor
SMNS
-
3
-55°C
150°C
79K
4.
BSS101N-channel SIPMOS small-signal transistor
SMNS
-
3
-55°C
150°C
79K
5.
DGSS10-06CC600V gallium arsenide schottky diode
IXYS
ISOPLUS220
3
-55°C
175°C
54K
6.
DSS10-0045A45V power schottky rectifier
IXYS
TO-220AC
2
-55°C
175°C
36K
7.
DSS10-0045B45V power schottky rectifier
IXYS
TO-220AC
2
-55°C
150°C
32K
8.
DSS10-01A100V power schottky rectifier
IXYS
TO-220AC
2
-40°C
175°C
43K
9.
DSS10-01AS100V power schottky rectifier
IXYS
TO-263AB
2
-40°C
175°C
43K
10.
FSS100-008A80V dual power schottky diode
IXYS
-
3
-55°C
175°C
30K
11.
FSS101P-Channel Silicon MOSFET Load S/W Applications
SANYO
-
-
-
-
116K
12.
FSS104P-Channel Silicon MOSFET DC/DC Converter Applications
SANYO
-
-
-
-
93K
13.
HSS104High frequency small signal diode
HIT
MHD
-
-
-
25K
14.
SS100Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
PAJIT
DO-214AC
2
-50°C
125°C
66K
15.
SS100-T1Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier
WTE
SMA
2
-65°C
125°C
42K
16.
SS100-T1Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier
WTE
SMA
2
-65°C
125°C
42K
17.
SS100-T3Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier
WTE
SMA
2
-65°C
125°C
42K
18.
SS100-T3Reverse voltage: 100.00V; 1.0A surface mount schottky barrier rectifier
WTE
SMA
2
-65°C
125°C
42K
19.
SSS10N60B600V N-channel MOSFET, 600V, 6A
FAIR
TO-220F
3
-55°C
150°C
909K
20.
USS10Standard Rectifier (trr more than 500ns)
MSEMI
DH
-
-
-
136K
1 2


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