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G61 datasheet
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Found: 20 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | ADG611YRU | 1pC charge injection, 100pA leakage, CMOS +-5V/+5V/+3V quad SPST switch. For automatic test equipment, data acquisition systems, battery-powered systems, communication systems, sample and hold systems, audio signal routing | AD | TSSOP | 16 | -40°C | 125°C | 152K | | 2. | ADG612YRU | 1pC charge injection, 100pA leakage, CMOS +-5V/+5V/+3V quad SPST switch. For automatic test equipment, data acquisition systems, battery-powered systems, communication systems, sample and hold systems, audio signal routing | AD | TSSOP | 16 | -40°C | 125°C | 152K | | 3. | ADG613YRU | 1pC charge injection, 100pA leakage, CMOS +-5V/+5V/+3V quad SPST switch. For automatic test equipment, data acquisition systems, battery-powered systems, communication systems, sample and hold systems, audio signal routing | AD | TSSOP | 16 | -40°C | 125°C | 152K | | 4. | ADG619BRM | 13V; CMOS +-5V/+5V, 4OHm SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | AD | SOIC | 8 | -40°C | 85°C | 145K | | 5. | ADG619BRT | 13V; CMOS +-5V/+5V, 4OHm SPDT switch. For outomatic test equipment, power routing, communication systems, data acquisition systems, etc. | AD | SOT-23 | 8 | -40°C | 85°C | 145K | | 6. | FAR-F6CE1G6190-K222-V | Piezoelectric SAW BPF(700 to 1700 MHz) | FJTSU | SMT | 6 | -30°C | 85°C | 515K | | 7. | FAR-F6CE1G6190-K222-U | Piezoelectric SAW BPF(700 to 1700 MHz) | FJTSU | SMT | 6 | -30°C | 85°C | 515K | | 8. | FAR-F6CE1G6190-K222-W | Piezoelectric SAW BPF (700 to 1700 MHz) | FJTSU | SMT | 6 | -30°C | 85°C | 515K | | 9. | G6121 | Active area size:5mm; extended input voltage:+-15V; infrared detector mudule with preamp non-cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | HAMAM | Plastic | 4 | -30°C | 80°C | 196K | | 10. | G6122 | Active area size:1mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | HAMAM | - | - | 0°C | 40°C | 117K | | 11. | G6122-03 | Active area size:1mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | HAMAM | - | - | 0°C | 40°C | 117K | | 12. | G6126 | Active area size:5mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection | HAMAM | - | - | 0°C | 40°C | 117K | | 13. | LNG61LCF6 | Round Type visible light emitting diode | PANAS | - | - | - | - | 28K | | 14. | MG61D | Solid state indicator | ME | Epoxy | 2 | -55°C | 100°C | 57K | | 15. | MG61D | 5V, 100mW orange LED lamp | ME | - | 2 | -55°C | 100°C | 42K | | 16. | PVG612 | HEXFET power mosfet photovoltaic relay | IRF | DIP | 6 | -40°C | 85°C | 274K | | 17. | PVG612S | HEXFET power mosfet photovoltaic relay | IRF | DIP | 6 | -40°C | 85°C | 274K | | 18. | PVG612S-T | HEXFET power mosfet photovoltaic relay | IRF | DIP | 6 | -40°C | 85°C | 274K | | 19. | SG6100F | Diode Array | MSEMI | Flatpack | - | - | - | 34K | | 20. | SG6101J | Diode Array | MSEMI | DIP | - | - | - | 34K |
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