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Searchign results: F1002

F1002 datasheet



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Found: 19      Displaying: 1 - 19
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
F1002Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
37K
2.
HAF1002(L)Power termal MOSFET
HIT
LDPAK
-
-
-
35K
3.
HAF1002(S)Power termal MOSFET
HIT
LDPAK
-
-
-
35K
4.
MRF1002MAMicrowave pulse power transistor
MOT
-
4
-
-
109K
5.
MRF1002MBMicrowave pulse power transistor
MOT
-
4
-
-
109K
6.
PTF10020125 watts, 860-960 MHz GOLDMOS field effect transistor
ERSON
20240
4
-
-
313K
7.
PTF1002130 watts, 1.4-1.6 GHz GOLDMOS field effect transistor
ERSON
20237
4
-
-
278K
8.
UF10021AMP ultra fast switching rectifier
CALLM
-
2
-65°C
150°C
759K
9.
UF1002100V; 1.0A ultra-fast rectifier; high current capability and high speed switching
DIODS
-
2
-65°C
150°C
62K
10.
UF1002100V, 1.0A ultra fast rectifier
LITON
-
2
-55°C
150°C
35K
11.
UF1002Ultrafast switching rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 10.0 A.
PAJIT
TO-220AC
2
-50°C
150°C
60K
12.
UF1002Reverse voltage: 200.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
13.
UF1002CTReverse voltage: 200.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
14.
UF1002CTReverse voltage: 200.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
15.
UF1002FUltrafast switching rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 10.0 A.
PAJIT
ITO-220AC
3
-50°C
150°C
59K
16.
UF1002FReverse voltage: 200.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
17.
UF1002FCTReverse voltage: 200.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
18.
UF1002FCTReverse voltage: 200.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
19.
UF1002M100V, 1.0A ultra fast rectifier
LITON
-
2
-55°C
125°C
35K
1


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