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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | CDB6403 | Evaluation board | CIRUS | - | - | -40°C | 85°C | 761K |
| 2. | CDB6422 | Evaluation board | CIRUS | - | - | -40°C | 85°C | 676K |
| 3. | FDB6021P | 20V P-Channel 1.8V Specified PowerTrench MOSFET | FAIR | - | - | - | - | 80K |
| 4. | FDB6030BL | N-Channel Logic Level PowerTrench® MOSFET | FAIR | - | - | - | - | 401K |
| 5. | FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 473K |
| 6. | FDB6035AL | N-Channel Logic Level PowerTrench® MOSFET | FAIR | - | - | - | - | 414K |
| 7. | FDB6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 413K |
| 8. | FDB603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 414K |
| 9. | FDB6644 | 30V N-Channel PowerTrench MOSFET | FAIR | - | - | - | - | 80K |
| 10. | FDB6644S | 30V N-Channel PowerTrench SyncFET TM | FAIR | - | - | - | - | 160K |
| 11. | FDB6670AL | N-Channel Logic Level PowerTrench® MOSFET | FAIR | - | - | - | - | 413K |
| 12. | FDB6676 | 30V N-Channel Logic Level PowerTrench MOSFET | FAIR | - | - | - | - | 82K |
| 13. | FDB6690S | 30V N-Channel PowerTrench SyncFET | FAIR | - | - | - | - | 88K |
| 14. | NDB6020P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 62K |
| 15. | NDB6030L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V | FAIR | TO-263 | - | - | - | 56K |
| 16. | NDB603AL | N-channel logic level enhancement mode field effect transistor, 30V, 25A | FAIR | TO-263AB | 3 | -65°C | 175°C | 65K |
| 17. | NDB6051 | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 4 V (D2-Pak) Voltage Vds max 50 V | FAIR | TO-263 | - | - | - | 54K |
| 18. | NDB6060L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V | FAIR | TO-263 | - | - | - | 361K |
| 19. | SDB60N03L | 30V; 60A; 75W; N-channel logic level enchanced mode field effect transistor | SM | TO-220 | 3 | -65°C | 175°C | 416K |
| 20. | TMS320C44PDB60 | DIGITAL SIGNAL PROCESSORS | TI | PDB | 304 | - | - | 629K |
