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52-10 datasheet



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Found: 21      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
BCP52-10PNP medium power transistors
PHLPS
SOT223
-
-
-
44K
2.
BCP52-10PNP silicon AF transistor
SMNS
SOT-223
4
-
-
140K
3.
BCX52-10PNP medium power transistors
PHLPS
SOT89
-
-
-
42K
4.
BCX52-10PNP medium power transistor.
PHLPS
SOT89
3
-65°C
150°C
58K
5.
BCX52-10PNP medium power transistor.
PHLPS
SOT89
3
-65°C
150°C
58K
6.
BCX52-10PNP silicon AF transistor
SMNS
SOT-89
4
-
-
146K
7.
BUK452-100APowerMOS transistor. Drain-source voltage 100 V.
PHLPS
TO220AB
3
0°C
175°C
71K
8.
BUK452-100A100 V, power MOS transistor
PHLPS
SOT
3
-
-
56K
9.
BUK452-100B100 V, power MOS transistor
PHLPS
SOT
3
-
-
56K
10.
BUK452-100BPowerMOS transistor. Drain-source voltage 100 V.
PHLPS
TO220AB
3
0°C
175°C
71K
11.
BUK552-100A100 V, power MOS transistor
PHLPS
SOT
3
-
-
56K
12.
BUK552-100APowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 10 A.
PHLPS
TO220AB
3
0°C
175°C
71K
13.
BUK552-100B100 V, power MOS transistor
PHLPS
SOT
3
-
-
56K
14.
CS52-10AHigh voltage silicon rectifiers
CALLM
-
2
-65°C
150°C
32K
15.
CY37512P352-100BGC5V, ISR high-performance CPLDs, 512 macrocells, 100MHz
CYPR
BGA
352
0°C
70°C
1M
16.
CY37512P352-100BGI5V, ISR high-performance CPLDs, 512 macrocells, 100MHz
CYPR
BGA
352
-40°C
85°C
1M
17.
CY7C1352-100AC256K x18 Pipelined SRAM with NoBL Architecture
CYPR
-
-
-
-
185K
18.
ESJA52-10AHigh voltage silicon diode
FUJI
-
2
-
-
141K
19.
P7152-10Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection
HAMAM
-
-
0°C
40°C
103K
20.
P7752-10Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection
HAMAM
-
-
0°C
40°C
103K
1 2


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