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Found: 339      Displaying: 181 - 200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
181.
KM416V1004CJL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh
SMSNG
SOJ
42
0°C
70°C
804K
182.
KM416V1004CT-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms
SMSNG
TSOP
44
0°C
70°C
804K
183.
RBV100050 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
184.
RBV1000D50 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
185.
RBV1001100 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
186.
RBV1001D100 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
187.
RBV1002200 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
188.
RBV1002D200 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
189.
RBV1004400 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
190.
RBV1004D400 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
191.
RBV1006600 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
192.
RBV1006D600 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
193.
RBV1008800 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
19K
194.
RBV1008D800 V, 10 A, silicon bridge rectifier
EIC
RBV25
4
-40°C
150°C
41K
195.
TC55V1001FI-85131,072-word by 8 bit static RAM, access time 85ns
TOS
SOP
32
-40°C
85°C
557K
196.
TC58V1001ST-10L131,072-word by 8 bit static RAM, 100 ns
TOS
TSOP
32
0°C
70°C
551K
197.
TC58V1001ST-10L131,072-word by 8 bit static RAM, 100 ns
TOS
TSOP
32
0°C
70°C
551K
198.
TC58V1001ST-85L131,072-word by 8 bit static RAM, 85 ns
TOS
TSOP
32
0°C
70°C
551K
199.
TC58V1001TR-10L131,072-word by 8 bit static RAM, 100 ns
TOS
TSOP
32
0°C
70°C
551K
200.
UTV100B100 W, 28 V, 470-860 MHz common emitter transistor
GHZ
55RT
3
-
-
234K
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