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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 185 Displaying: 161 - 180| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 161. | HTIP31C | 5V 3A NPN epiataxial planar transistor for use in general purpose amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 33K | | 162. | HTIP32C | 5V 3A PNP epiataxial planar transistor for use in general purpose amplifier and switching applications | HSMC | TO-220 | 3 | - | - | 32K | | 163. | TIP30 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 164. | TIP30A | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 165. | TIP30B | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 166. | TIP30C | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 167. | TIP31 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 168. | TIP31A | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 169. | TIP31B | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 37K | | 170. | TIP31CF | General Purpose Transistor | KEC | - | - | - | - | 356K | | 171. | TIP32C | PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 172. | TIP32CF | General Purpose Transistor | KEC | - | - | - | - | 357K | | 173. | TIP33C | General Purpose Transistor | KEC | - | - | - | - | 73K | | 174. | TIP34C | General Purpose Transistor | KEC | - | - | - | - | 73K | | 175. | TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 176. | TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 177. | TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 178. | TIP36A | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 179. | TIP36B | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 180. | TIP36C | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K |
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