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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | AT-259 | DC-2 GHz, voltage variable absorptive attenuator | MACOM | SOT | 4 | -40°C | 85°C | 112K |
| 102. | AT-259TR | DC-2 GHz, voltage variable absorptive attenuator | MACOM | SOT | 4 | -40°C | 85°C | 112K |
| 103. | GS816018T-250 | 5.5ns 250MHz 1M x 18 18Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 785K |
| 104. | GS816018T-250I | 5.5ns 250MHz 1M x 18 18Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 785K |
| 105. | GS816019T-250 | 250MHz 1M x 18 synchronous SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 106. | GS816019T-250I | 250MHz 1M x 18 synchronous SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 107. | GS816032T-250 | 5.5ns 250MHz 512K x 32 18Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 785K |
| 108. | GS816032T-250I | 5.5ns 250MHz 512K x 32 18Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 785K |
| 109. | GS816033T-250 | 250MHz 512K x 32 synchronous SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 110. | GS816033T-250I | 250MHz 512K x 32 synchronous SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 111. | GS816036T-250 | 5.5ns 250MHz 512K x 36 18Mb synchronous burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 785K |
| 112. | GS816036T-250I | 5.5ns 250MHz 512K x 36 18Mb synchronous burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 785K |
| 113. | GS816037T-250 | 250MHz 512K x 36 synchronous SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 901K |
| 114. | PEEL16CV8T-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 173K |
| 115. | PEEL18CV8T-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 397K |
| 116. | PEEL18CV8ZT-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 242K |
| 117. | PEEL18LV8ZT-25 | 35ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 113K |
| 118. | PEEL22CV10AT-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 247K |
| 119. | PEEL22CV10AZT-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 24 | 0°C | 70°C | 381K |
| 120. | PEEL22LV10AZT-25 | CMOS programmable electrically erasable logic device, 25ns | ICT | TSSOP | 24 | 0°C | 70°C | 135K |
