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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | 3KP120 | 120 V, 1 mA, 3000 W, glass passivated junction transient voltage suppressor | SURGE | P-600 | 2 | -55°C | 175°C | 206K |
| 142. | 3KP120A | 120 V, 1 mA, 3000 W, glass passivated junction transient voltage suppressor | SURGE | P-600 | 2 | -55°C | 175°C | 206K |
| 143. | 3KP120C | 120 V, 1 mA, 3000 W, glass passivated junction transient voltage suppressor | SURGE | P-600 | 2 | -55°C | 175°C | 206K |
| 144. | 3KP120CA | 120 V, 1 mA, 3000 W, glass passivated junction transient voltage suppressor | SURGE | P-600 | 2 | -55°C | 175°C | 206K |
| 145. | 5KP120 | 120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 647K |
| 146. | 5KP120A | 120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 647K |
| 147. | BSP120 | 200 V, N-channel enhancement mode vertical D-MOS transistor | PHLPS | SOT | 4 | - | - | 65K |
| 148. | BSP120 | N-channel enhancement mode vertical D-MOS transistor. | PHLPS | SOT223 | 4 | 0°C | 150°C | 76K |
| 149. | NCP1205P | Single ended PWM controller featuring QR operation and soft frequency foldback | ON | PDIP | 8 | -25°C | 125°C | 163K |
| 150. | NCP1205P2 | Single ended PWM controller featuring QR operation and soft frequency foldback | ON | PDIP | 14 | -25°C | 125°C | 163K |
| 151. | P1200SA | 100 V, LCAS asymmetrical discrete device | TECOR | DO-214AA | 2 | -40°C | 150°C | 1M |
| 152. | P1200SB | 100 V, LCAS asymmetrical discrete device | TECOR | DO-214AA | 2 | -40°C | 150°C | 1M |
| 153. | P1200SC | 100 V, LCAS asymmetrical discrete device | TECOR | DO-214AA | 2 | -40°C | 150°C | 1M |
| 154. | P1201 | Supply voltage:100Vdc; 70mW; CdS photoconductive cell: resin coating type. Standard type designed for general purpose, wide application | HAMAM | - | 2 | -30°C | 60°C | 106K |
| 155. | P1201-01 | Supply voltage:100Vdc; 70mW; CdS photoconductive cell: resin coating type. Standard type designed for general purpose, wide application | HAMAM | - | 2 | -30°C | 60°C | 106K |
| 156. | P1201-04 | 100Vdc; 50mW; CdS photoconductive cell: standard type designed for general purpose, wide application | HAMAM | - | 2 | -30°C | 50°C | 116K |
| 157. | P1201-06 | 100Vdc; 50mW; CdS photoconductive cell: standard type designed for general purpose, wide application | HAMAM | - | 2 | -30°C | 50°C | 116K |
| 158. | P1202-12 | 100Vdc; 150mW; CdS photoconductive cell: resin coating type. Standard type designed to withstand high voltage and high power | HAMAM | - | 2 | -30°C | 50°C | 114K |
| 159. | P1202-16 | 200Vdc; 100mW; CdS photoconductive cell: resin coating type. Standard type designed to withstand high voltage and high power | HAMAM | - | 2 | -30°C | 50°C | 114K |
| 160. | TIP120 | NPN Epitaxial Darlington Transistor | FAIR | - | - | - | - | 45K |
