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Found: 78      Displaying: 41 - 60
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
NTE5543Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 200V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
42.
NTE5544Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 300V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
43.
NTE5545Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
44.
NTE5546Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 500V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
45.
NTE5547Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 600V. RMS on-state current 35A.
NTE
TO48
3
-40°C
150°C
19K
46.
NTE5550Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 50V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
47.
NTE5552Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
48.
NTE5554Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
49.
NTE5556Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 600V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
50.
NTE555ASilicon pin diode. VNF band switch.
NTE
DO34
2
0°C
150°C
17K
51.
NTE5562Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 200V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
52.
NTE5564Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
53.
NTE5566Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
54.
NTE5567Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 200V. Max non - repetitive peak voltage 300V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
55.
NTE5568Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 600V. Max non - repetitive peak voltage 700V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
56.
NTE5569Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1200V. Max non - repetitive peak voltage 1300V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
57.
NTE5570Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A.
NTE
-
4
-40°C
125°C
21K
58.
NTE5571Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1600V. Max non - repetitive peak voltage 1700V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
59.
NTE5572Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 600V. Non - repetitive peak reverse blocking voltage, Vrsm = 900V. RMS on-state current, Itrms = 125A.
NTE
-
4
-40°C
125°C
21K
60.
NTE5575Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 200V. Repetitive peak reverse voltage, Vrrm = 200V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
1 2 3 4


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