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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1N5550 | 200 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 42. | 1N5551 | 400 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 43. | 1N5552 | 600 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 44. | 1N5553 | 800 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 45. | 1N5554 | 1000 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 46. | 1N5556 | Transient Voltage Suppressor | MSEMI | DO-13 | - | - | - | 96K |
| 47. | 1N5557 | Transient Voltage Suppressor | MSEMI | DO-13 | - | - | - | 96K |
| 48. | 1N5558 | Transient Voltage Suppressor | MSEMI | DO-13 | - | - | - | 96K |
| 49. | 2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | ME | TO-92F | 3 | -55°C | 150°C | 165K |
| 50. | 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 34K |
| 51. | 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | BOCA | - | 3 | -55°C | 150°C | 57K |
| 52. | 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | ME | TO-92F | 3 | -55°C | 150°C | 165K |
| 53. | 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 75K |
| 54. | 2N5555 | JFET switching | MOT | - | 3 | -65°C | 135°C | 271K |
| 55. | H2N5551 | 600mA NPN epitaxial planar transistor | HSMC | - | 3 | - | - | 37K |
| 56. | HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
| 57. | HN/2N5551 | 160 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
| 58. | IN555D | Timing circuit | INTGR | SOIC | 8 | -10°C | 70°C | 96K |
| 59. | IN555N | Timing circuit | INTGR | Plastic DIP | 8 | -10°C | 70°C | 96K |
| 60. | PJ2N5551CT | 180V; 600mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 190K |
