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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | 1N5518 | Nom zener voltage:3.3V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 302. | 1N5519 | Nom zener voltage:3.6V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 303. | 1N5520 | Nom zener voltage:3.9V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 304. | 1N5521 | Nom zener voltage:4.3V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 305. | 1N5523 | Nom zener voltage:5.1V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 306. | 1N5524 | Nom zener voltage:5.6V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 307. | 1N5525 | Nom zener voltage:6.2V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 308. | 1N5526 | Nom zener voltage:6.8V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 309. | 1N5526 | Nom zener voltage:6.8V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 310. | 1N5527 | Nom zener voltage:7.5V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 311. | 2N5551 | NPN high-voltage transistor. | PHLPS | - | 3 | -65°C | 150°C | 55K |
| 312. | 2N5551 | NPN high-voltage transistor. | PHLPS | SOT54 | 3 | -65°C | 150°C | 55K |
| 313. | 2N5582 | Chip: geometry 0400; polarity NPN | SECOA | - | - | - | - | 29K |
| 314. | AN5520 | TV vertical deflection output circuit | PANAS | SIL | 11 | -20°C | 70°C | 170K |
| 315. | AN5521 | TV vertical deflection output | PANAS | SIL | 7 | -20°C | 70°C | 98K |
| 316. | H2N5551 | 600mA NPN epitaxial planar transistor | HSMC | - | 3 | - | - | 37K |
| 317. | HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
| 318. | HN/2N5551 | 160 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
| 319. | PJ2N5551CT | 180V; 600mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 190K |
| 320. | SN55115W | Dual differential receiver | TI | W | 16 | -55°C | 125°C | 187K |
