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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1N5401 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 150°C | 151K |
| 42. | 1N5401 | General purpose plastic rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 3.0 A. | CNEL | - | 2 | -50°C | 175°C | 159K |
| 43. | 1N5401 | 100V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 44. | 1N5401 | 100 V, 3 A silicon rectifier | FORMO | DO-27 | 2 | -65°C | 175°C | 32K |
| 45. | 1N5401 | 100 V, 3 A, plastic silicon rectifier | HONEY | DO | 2 | -65°C | 175°C | 126K |
| 46. | 1N5401 | 100 V, 3 A silicon rectifier | INVAC | DO | 2 | -50°C | 170°C | 81K |
| 47. | 1N5401 | 100V, 3.0A plastic silicon rectifier | LITON | - | 2 | -55°C | 125°C | 33K |
| 48. | 1N5401 | 100 V, 3 A general diode | LRC | DO | 2 | - | - | 49K |
| 49. | 1N5401 | 3.0A, 100V ultra fast recovery rectifier | MCC | - | - | - | - | 78K |
| 50. | 1N5401 | 100 V, 3.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 121K |
| 51. | 1N5401 | 100 V, 3 A, high current plastic silicon rectifier | TRSYS | DO | 2 | -55°C | 150°C | 155K |
| 52. | 1N5401G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 175°C | 151K |
| 53. | 1N5401G | 100V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 54. | 1N5401G | 100 V, 1 A glass passivated rectifier | FORMO | DO-27 | 2 | -65°C | 175°C | 32K |
| 55. | 1N5401G | 100V, 3.0A glass passivated rectifier | LITON | - | 2 | -55°C | 150°C | 35K |
| 56. | 1N5401G | 100 V, 3 A, general purpose GPP diode | LRC | DO | 2 | - | - | 50K |
| 57. | 1N5401G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 3.0 A. | SSE | - | 2 | -65°C | 150°C | 16K |
| 58. | H2N5401 | 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | HSMC | - | 3 | - | - | 38K |
| 59. | HN/2N5401 | 150 V, PNP silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 124K |
| 60. | PJ2N5401CT | 130V; 600mA PNP epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 191K |
