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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 55      Displaying: 41 - 55
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
1N540050V; 3.0A rectifier; high current capability and low forward voltage drop
DIODS
-
2
-65°C
175°C
62K
42.
1N540050 V, 3 A, plastic silicon rectifier
HONEY
DO
2
-65°C
175°C
126K
43.
1N540050 V, 3 A silicon rectifier
INVAC
DO
2
-50°C
170°C
81K
44.
1N540050 V, 3 A general diode
LRC
DO
2
-
-
49K
45.
1N54003.0A, 50V ultra fast recovery rectifier
MCC
-
-
-
-
78K
46.
1N540050 V, 3.0 A silicon rectifier
SURGE
DO
2
-65°C
125°C
121K
47.
1N540050 V, 3 A, high current plastic silicon rectifier
TEL
-
2
-55°C
150°C
155K
48.
1N540050 V, 3 A, high current plastic silicon rectifier
TRSYS
DO
2
-55°C
150°C
155K
49.
1N5400G50V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
DIODS
-
2
-65°C
150°C
59K
50.
1N5400G3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
JGD
-
2
-65°C
150°C
128K
51.
1N5400G50 V, 3 A, general purpose GPP diode
LRC
DO
2
-
-
50K
52.
1N5400GGlass passivated junction rerctifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 3.0 A.
SSE
-
2
-65°C
150°C
16K
53.
1N5400GP50 V, 3 A glass passivated junction rectifier
FAGOR
-
2
-65°C
175°C
39K
54.
HN/2N5400120 V, PNP silicon expitaxial planar transistor
HONEY
-
3
-
-
124K
55.
IN54003.0 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
JGD
-
2
-65°C
125°C
139K
1 2 3


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