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Found: 55      Displaying: 21 - 40
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
1N5400Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 3.0 A.
BYTES
DO-27
2
-65°C
150°C
151K
22.
1N5400General purpose plastic rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A.
CNEL
-
2
-50°C
175°C
159K
23.
1N540050 V, 3 A silicon rectifier
FORMO
DO-27
2
-65°C
175°C
32K
24.
1N540050 V, 3 A, General purpose plastic rectifier
GODAR
DO
2
-50°C
170°C
198K
25.
1N540050V, 3.0A plastic silicon rectifier
LITON
-
2
-55°C
125°C
33K
26.
1N5400High current plastic silicon rectifier. Max reccurent peak reverse voltage 50V. Max average forward rectified current 3.0A.
PAJIT
-
2
-55°C
150°C
51K
27.
1N540050V, 3.0A silicon rectifier
WTE
-
2
-65°C
125°C
39K
28.
1N540050V, 3.0A silicon rectifier
WTE
-
2
-65°C
125°C
39K
29.
1N540050V, 3.0A silicon rectifier
WTE
-
2
-65°C
125°C
39K
30.
1N540050 V, 3.0 A silicon rectifier
ZOWIE
-
2
-65°C
175°C
47K
31.
1N540050 V, 3.0 A silicon rectifier
ZOWIE
-
2
-65°C
175°C
47K
32.
1N5400-T350V, 3.0A silicon rectifier
WTE
-
2
-65°C
125°C
39K
33.
1N5400-TB50V, 3.0A silicon rectifier
WTE
-
2
-65°C
125°C
39K
34.
1N5400GGlass passivated rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 3.0 A.
BYTES
DO-27
2
-65°C
175°C
151K
35.
1N5400G50 V, 3.0 A silicon rectifier
EIC
-
2
-65°C
175°C
16K
36.
1N5400G50 V, 1 A glass passivated rectifier
FORMO
DO-27
2
-65°C
175°C
32K
37.
1N5400G50 V, 3 A, Glass passivated junction rectifier
GODAR
DO
2
-65°C
175°C
220K
38.
1N5400G50V, 3.0A glass passivated rectifier
LITON
-
2
-55°C
150°C
35K
39.
2N54001W PNP complementary silicon general purpose high voltage transistor
ME
TO-92F
3
-55°C
150°C
165K
40.
2N5400Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW.
USHA
-
3
0°C
150°C
45K
1 2 3


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