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Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 206 Displaying: 181 - 200| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 181. | AD7376AN100 | 0.3-30V; 20mA; operational digital potentiometer. For mechanical potentional replacement, instrumentation: gain, offset adjustment | AD | TSSOP | 14 | -40°C | 85°C | 275K | | 182. | AD8400AN100 | 0.3-8V; 1/2/4-channel digital potentiometers. For mechanical potentiometer replacement, programmable filters, delays, time constants, volume control, panning, line impendance matching, power supply adjustment | AD | DIP | 8 | -40°C | 125°C | 443K | | 183. | AD8400AN100 | 0.3-8V; 1/2/4-channel digital potentiometers. For mechanical potentiometer replacement, programmable filters, delays, time constants, volume control, panning, line impendance matching, power supply adjustment | AD | DIP | 14 | -40°C | 125°C | 443K | | 184. | AD8403AN100 | 0.3-8V; 1/2/4-channel digital potentiometers. For mechanical potentiometer replacement, programmable filters, delays, time constants, volume control, panning, line impendance matching, power supply adjustment | AD | DIP | 24 | -40°C | 125°C | 443K | | 185. | CNN100 | Limiter fast acting lift-truck fuse. 100 amperes, 48 Volts DC, 75 Volts AC. Interrupting rating: 2,500 amperes. | LIFUS | - | 2 | - | - | 102K | | 186. | DMN100-7 | 30V; 1.1A N-channel enchencement mode field effect transistor | DIODS | - | 3 | -55°C | 150°C | 63K | | 187. | FGL60N100D | IGBT | FAIR | - | - | - | - | 438K | | 188. | FGL60N100D | IGBT | FAIR | - | - | - | - | 438K | | 189. | FIN1001 | 3.3V LVDS 1-Bit High Speed Differential Driver | FAIR | - | - | - | - | 618K | | 190. | FQD2N100 | 1000V N-Channel MOSFET | FAIR | - | - | - | - | 622K | | 191. | IXFE23N100 | 1000V HiPerFET power MOSFET | IXYS | ISOPLUS227 | 4 | -55°C | 150°C | 653K | | 192. | IXFE24N100 | 1000V HiPerFET power MOSFET | IXYS | ISOPLUS227 | 4 | -55°C | 150°C | 653K | | 193. | IXFE34N100 | 1000V HiPerFET power MOSFET | IXYS | ISOPLUS227 | 4 | -55°C | 150°C | 653K | | 194. | IXFE36N100 | 1000V HiPerFET power MOSFET | IXYS | ISOPLUS227 | 4 | -55°C | 150°C | 653K | | 195. | IXFF24N100 | 1000V HiPerFET power MOSFET | IXYS | - | 5 | -55°C | 150°C | 72K | | 196. | IXRH50N100 | 1000V IGBT with reverse blocking capability | IXYS | TO-247AD | 3 | -55°C | 150°C | 43K | | 197. | IXRH50N100 | 1000V IGBT with reverse blocking capability | IXYS | TO-247AD | 3 | -55°C | 150°C | 43K | | 198. | IXTH1N100 | 1000V high voltage MOSFET | IXYS | TO-247AD | 3 | -55°C | 150°C | 73K | | 199. | IXTT1N100 | 1000V high voltage MOSFET | IXYS | TO-268 | 3 | -55°C | 150°C | 73K | | 200. | UN100 | NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 150W. | USHA | TO-3 | 3 | -65°C | 200°C | 47K |
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