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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 441. | 28LV256SM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 442. | 28LV256TC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 443. | 28LV256TC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 444. | 28LV256TC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 445. | 28LV256TC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 446. | 28LV256TI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 447. | 28LV256TI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 448. | 28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 449. | 28LV256TI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 450. | 28LV256TM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 451. | 28LV256TM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 452. | 28LV256TM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 453. | 28LV256TM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 454. | IS62LV256-45J | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | TSOP | 28 | 0°C | 70°C | 421K |
| 455. | IS62LV256-45JI | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | TSOP | 28 | -40°C | 85°C | 421K |
| 456. | IS62LV256-45N | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | DIP | 28 | 0°C | 70°C | 421K |
| 457. | IS62LV256-45U | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | 0°C | 70°C | 421K |
| 458. | IS62LV256-45UI | 45ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | -40°C | 85°C | 421K |
| 459. | IS62LV256-70U | 70ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | 0°C | 70°C | 421K |
| 460. | IS62LV256-70UI | 70ns; 3.3V; 32K x 8 low voltage static RAM | ICSI | SOP | 28 | -40°C | 85°C | 421K |
