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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 401. | 28LV256JC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 402. | 28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 403. | 28LV256JC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 404. | 28LV256JC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 41K |
| 405. | 28LV256JI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 406. | 28LV256JI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 407. | 28LV256JI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 408. | 28LV256JI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 41K |
| 409. | 28LV256JM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 410. | 28LV256JM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 411. | 28LV256JM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 412. | 28LV256JM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 41K |
| 413. | 28LV256PC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 414. | 28LV256PC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 415. | 28LV256PC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 416. | BS62LV2565DC | 55/70ns 35mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit | BSI | DICE | 28 | 0°C | 70°C | 330K |
| 417. | BS62LV2565DI | 55/70ns 35mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit | BSI | DICE | 28 | -40°C | 85°C | 330K |
| 418. | BS62LV2565JC | 55/70ns 35mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit | BSI | SOJ | 28 | 0°C | 70°C | 330K |
| 419. | BS62LV2565JI | 55/70ns 35mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit | BSI | SOJ | 28 | -40°C | 85°C | 330K |
| 420. | BS62LV2565PI | 55/70ns 35mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit | BSI | DIP | 28 | -40°C | 85°C | 330K |
