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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 421. | BS616LV1010AC | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | BGA | 44 | 0°C | 70°C | 216K |
| 422. | BS616LV1010AI | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | BGA | 44 | 0°C | 85°C | 216K |
| 423. | BS616LV1010EC | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | TSOP | 44 | 0°C | 70°C | 216K |
| 424. | BS616LV1010EI | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | BSI | TSOP | 44 | 0°C | 85°C | 216K |
| 425. | BS62LV1023SC | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit | BSI | SOP | 32 | 0°C | 70°C | 378K |
| 426. | BS62LV1023SI | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit | BSI | SOP | 32 | -40°C | 85°C | 378K |
| 427. | BS62LV1023STC | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit | BSI | STSOP | 32 | 0°C | 70°C | 378K |
| 428. | BS62LV1023TC | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit | BSI | TSOP | 32 | 0°C | 70°C | 378K |
| 429. | BS62LV1023TI | 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit | BSI | TSOP | 32 | -40°C | 85°C | 378K |
| 430. | PEEL22LV10AZJ-25 | 35ns CMOS programmable electrically erasable logic device | ICT | PLCC | 24 | 0°C | 70°C | 137K |
| 431. | PEEL22LV10AZJ-25 | CMOS programmable electrically erasable logic device, 25ns | ICT | PLCC | 28 | 0°C | 70°C | 135K |
| 432. | PEEL22LV10AZJI-35 | 35ns CMOS programmable electrically erasable logic device | ICT | PLCC | 24 | -40°C | 85°C | 137K |
| 433. | PEEL22LV10AZJI-35 | CMOS programmable electrically erasable logic device, 35ns | ICT | PLCC | 28 | -40°C | 85°C | 135K |
| 434. | PEEL22LV10AZP-25 | 25ns CMOS programmable electrically erasable logic device | ICT | PDIP | 24 | 0°C | 70°C | 137K |
| 435. | PEEL22LV10AZPI-35 | 25ns CMOS programmable electrically erasable logic device | ICT | PDIP | 24 | -40°C | 85°C | 137K |
| 436. | PEEL22LV10AZS-25 | 35ns CMOS programmable electrically erasable logic device | ICT | SOIC | 24 | 0°C | 70°C | 137K |
| 437. | PEEL22LV10AZSI-35 | 35ns CMOS programmable electrically erasable logic device | ICT | SOIC | 24 | -40°C | 85°C | 137K |
| 438. | PEEL22LV10AZT-25 | CMOS programmable electrically erasable logic device, 25ns | ICT | TSSOP | 24 | 0°C | 70°C | 135K |
| 439. | PEEL22LV10AZTI-25 | 25ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 24 | 0°C | 70°C | 137K |
| 440. | PEEL22LV10AZTI-35 | 35ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 24 | -40°C | 85°C | 137K |
