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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | A29L160TG-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TFBGA | 48 | 0°C | 70°C | 433K |
| 42. | A29L160TG-70 | 70ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TFBGA | 48 | 0°C | 70°C | 433K |
| 43. | A29L160TG-90 | 90ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TFBGA | 48 | 0°C | 70°C | 433K |
| 44. | A29L160TM-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 32 | 0°C | 70°C | 433K |
| 45. | A29L160TM-70 | 70ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 32 | 0°C | 70°C | 433K |
| 46. | A29L160TM-90 | 90ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 32 | 0°C | 70°C | 433K |
| 47. | A29L160TV-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TSOP | 32 | 0°C | 70°C | 433K |
| 48. | A29L160TV-70 | 70ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TSOP | 32 | 0°C | 70°C | 433K |
| 49. | A29L160TV-90 | 90ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TSOP | 32 | 0°C | 70°C | 433K |
| 50. | A29L160TV-90 | 90ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TSOP | 32 | 0°C | 70°C | 433K |
| 51. | A29L160UM-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 44 | 0°C | 70°C | 433K |
| 52. | A29L160UM-70 | 70ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 44 | 0°C | 70°C | 433K |
| 53. | A29L160UM-90 | 90ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 44 | 0°C | 70°C | 433K |
| 54. | A29L160UV-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | TSOP | 48 | 0°C | 70°C | 433K |
| 55. | RL1601CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 56. | RL1602CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 100V, max RMS voltage 70V, max DC blocking voltage 100V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 57. | RL1603CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 58. | RL1604CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 59. | RL1605CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
| 60. | RL1606CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K |
