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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | KM48L16031BT-F0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 750K |
| 22. | KM48L16031BT-FY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 750K |
| 23. | KM48L16031BT-FZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 750K |
| 24. | KM48L16031BT-G0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 750K |
| 25. | KM48L16031BT-GY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 750K |
| 26. | KM48L16031BT-GZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 750K |
| 27. | LH28F320S3-L160 | 32-MBIT (4MB x 8/2MB x 16)Smart 3 Flash Memory | SHARP | __ | - | 0°C | 70°C | 4M |
| 28. | MBM29SL160BD-10PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit | FJTSU | plastic FBGA | 48 | -40°C | 85°C | 715K |
| 29. | MBM29SL160BD-10PFTN | Flash memory CMOS 16M (2M x 8/1M x16) bit | FJTSU | plastic TSOP-I | 48 | -40°C | 85°C | 715K |
| 30. | MBM29SL160BD-10PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit | FJTSU | plastic TSOP-I | 48 | -40°C | 85°C | 715K |
| 31. | MBM29SL160BD-12PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit | FJTSU | plastic FBGA | 48 | -40°C | 85°C | 715K |
| 32. | MBM29SL160BD-12PFTN | Flash memory CMOS 16M (2M x 8/1M x16) bit | FJTSU | plastic TSOP-I | 48 | -40°C | 85°C | 715K |
| 33. | MBM29SL160BD-12PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit | FJTSU | plastic TSOP-I | 48 | -40°C | 85°C | 715K |
| 34. | RL1601C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 35. | RL1602C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 100V, max RMS bridge input voltage 70V, max DC blocking voltage 100V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 36. | RL1603C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 37. | RL1604C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 400V, max RMS bridge input voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 38. | RL1605C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 39. | RL1606C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
| 40. | RL1607C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K |
