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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 361. | 1.5SMCJ33 | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 33V; Vbr(min/max) = 36.7/46.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 59.0V, @ Ipp = 25.2A | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 362. | 1.5SMCJ33A | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 33V; Vbr(min/max) = 36.7/42.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 53.3V, @ Ipp = 28.1A | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 363. | 1.5SMCJ33C | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 33V; Vbr(min/max) = 36.7/46.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 59.0V, @ Ipp = 25.2A | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 364. | 1.5SMCJ33CA | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 33V; Vbr(min/max) = 36.7/42.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 53.3V, @ Ipp = 28.1A | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 365. | 2SC3332 | NPN transistor for high-voltage switching applications | SANYO | - | 3 | -55°C | 150°C | 114K |
| 366. | 2SC3336 | NPN transistor for high voltage, high speed and high power switching | HIT | TO-3P | 3 | -55°C | 150°C | 32K |
| 367. | 2SC3338 | NPN transistor for UHF/VHF wide band amplifier | HIT | UPAK | 3 | -55°C | 150°C | 23K |
| 368. | 3.0SMCJ33 | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/46.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 59.0 V @ Ipp = 50.4 A. | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 369. | 3.0SMCJ33 | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/46.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 59.0 V @ Ipp = 50.4 A. | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 370. | 3.0SMCJ33A | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/42.2 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 53.3 V @ Ipp = 56.2 A. | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 371. | 3.0SMCJ33A | Breakdown volatge: 36.70V, 3000W surface mount transient voltage suppressor | WTE | SMC | 2 | -55°C | 150°C | 65K |
| 372. | 3.0SMCJ33A | Breakdown volatge: 36.70V, 3000W surface mount transient voltage suppressor | WTE | SMC | 2 | -55°C | 150°C | 65K |
| 373. | 3.0SMCJ33C | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/46.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 59.0 V @ Ipp = 50.4 A. | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 374. | 3.0SMCJ33CA | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/42.2 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 53.3 V @ Ipp = 56.2 A. | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 375. | 3.0SMCJ33CA | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/42.2 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 53.3 V @ Ipp = 56.2 A. | PAJIT | DO-214AB | 2 | -55°C | 150°C | 83K |
| 376. | IN74AC533N | Octal 3-state inverting transparent latch high-speed silicon-gate CMOS | INTGR | Plastic DIP | 20 | -40°C | 85°C | 206K |
| 377. | IN74HC533DW | Octal 3-state inverting transparent latch, high-performance silicon-gate CMOS | INTGR | SOIC | 20 | -55°C | 125°C | 168K |
| 378. | IN74HC533N | Octal 3-state inverting transparent latch, high-performance silicon-gate CMOS | INTGR | Plastic DIP | 20 | -55°C | 125°C | 168K |
| 379. | LCE33 | 33 V, 1 mA, 1500 W, low capacitance transient voltage suppressor | EIC | DO-201 | 2 | -65°C | 175°C | 56K |
| 380. | LCE33A | 33 V, 1 mA, 1500 W, low capacitance transient voltage suppressor | EIC | DO-201 | 2 | -65°C | 175°C | 56K |
| 381. | ULCE33 | 33 V, 1 mA, 1500 W, ultra low capacitance transient voltage suppressor | EIC | DO-201 | 2 | -65°C | 175°C | 56K |
| 382. | ULCE33A | 33 V, 1 mA, 1500 W, ultra low capacitance transient voltage suppressor | EIC | DO-201 | 2 | -65°C | 175°C | 56K |
