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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1621. | 28C256ASI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 1622. | 28C256ASI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 1623. | 28C256ASI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 41K |
| 1624. | 28C256ASM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 1625. | 28C256ASM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 1626. | 28C256ASM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 1627. | 28C256ASM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 41K |
| 1628. | 28C256ATC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1629. | 28C256ATC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1630. | 28C256ATC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1631. | 28C256ATC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 1632. | 28C256ATI-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1633. | 28C256ATI-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1634. | 28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1635. | 28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -40°C | 85°C | 41K |
| 1636. | 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1637. | 28C256ATM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1638. | 28C256ATM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1639. | 28C256ATM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 1640. | EPM3512AFC256-7 | Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 7ns | ALTRA | FBGA | 256 | 0°C | 90°C | 649K |
