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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | BC300 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 42. | BC301 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 43. | BC302 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 44. | BC303 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 45. | BC304 | 850mW NPN silicon AF medium power amplifier | ME | TO-39 | 3 | -55°C | 175°C | 122K |
| 46. | BC307 | 300mW PNP silicon planar epitaxial transistor | ME | TO-92F | 2 | -55°C | 150°C | 225K |
| 47. | BC307 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | USHA | - | 3 | 0°C | 150°C | 48K |
| 48. | BC308 | 300mW PNP silicon planar epitaxial transistor | ME | TO-92F | 2 | -55°C | 150°C | 225K |
| 49. | BC308 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | USHA | - | 3 | 0°C | 150°C | 49K |
| 50. | BC309 | 300mW PNP silicon planar epitaxial transistor | ME | TO-92F | 2 | -55°C | 150°C | 225K |
| 51. | IRG4BC30K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | IRF | - | 3 | -55°C | 150°C | 137K |
| 52. | IRG4BC30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | IRF | - | 3 | -55°C | 150°C | 196K |
| 53. | IRG4BC30KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | IRF | DDPak | 3 | -55°C | 150°C | 225K |
| 54. | IRG4BC30S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A | IRF | - | 3 | -55°C | 150°C | 161K |
| 55. | IRG4BC30U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | IRF | - | 3 | -55°C | 150°C | 167K |
| 56. | IRG4BC30U-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | IRF | DDPak | 3 | -55°C | 150°C | 308K |
| 57. | IRG4BC30UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | IRF | - | 3 | -55°C | 150°C | 234K |
| 58. | IRG4BC30W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A | IRF | - | 3 | -55°C | 150°C | 139K |
| 59. | IRG4BC30W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A | IRF | DDPak | 3 | -55°C | 150°C | 188K |
| 60. | TBC30-12EGWA | 76.2 mm (3.0 inch) 5 x 7 multicolor dot matrix display. High efficiency red, green. | KNBRT | - | 28 | -40°C | 85°C | 122K |
