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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 71 Displaying: 21 - 40| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | BC200 | 50mW miniature PNP AF low noise silicon planar epitaxial transistor | ME | MT-42 | 3 | -65°C | 125°C | 120K | | 22. | GC79BNBC20RD | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | GPSEM | - | - | - | - | 852K | | 23. | IRG4BC20FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 222K | | 24. | IRG4BC20K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 138K | | 25. | IRG4BC20K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 162K | | 26. | IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 199K | | 27. | IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 222K | | 28. | IRG4BC20MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | IRF | - | 3 | -55°C | 150°C | 251K | | 29. | IRG4BC20MD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | IRF | DDPak | 3 | -55°C | 150°C | 200K | | 30. | IRG4BC20S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 157K | | 31. | IRG4BC20SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 287K | | 32. | IRG4BC20SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 287K | | 33. | IRG4BC20SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | DDPak | 3 | -55°C | 150°C | 382K | | 34. | IRG4BC20U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A | IRF | - | 3 | -55°C | 150°C | 167K | | 35. | IRG4BC20UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A | IRF | - | 3 | -55°C | 150°C | 236K | | 36. | IRG4BC20W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | IRF | - | 3 | -55°C | 150°C | 130K | | 37. | IRG4BC20W-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A | IRF | DDPak | 3 | -55°C | 150°C | 152K | | 38. | TBC20-11EGWA | 50 mm (2.0 inch) 5 x 7 dot matrix display. High efficiency red, green. | KNBRT | - | 20 | -40°C | 85°C | 236K | | 39. | TBC20-12EGWA | 50 mm (2.0 inch) 5 x 7 dot matrix display. High efficiency red, green. | KNBRT | - | 18 | -40°C | 85°C | 236K | | 40. | TBC20-22EGWA | 50 mm (2.0 inch) 5 x 7 dot matrix display. High efficiency red, green. | KNBRT | - | 28 | -40°C | 85°C | 236K |
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