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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | G648D00B100 | Liquid crystal display module | SII | - | 14 | 0°C | 50°C | 1M |
| 42. | ISPLSI2064VE-100LB100 | 100 MHz 3.3V in-system prommable superFAST high density PLD | LATIC | CPGA | 100 | -55°C | 125°C | 200K |
| 43. | ISPLSI2064VE-135LB100 | 135 MHz 3.3V in-system prommable superFAST high density PLD | LATIC | CPGA | 100 | -55°C | 125°C | 200K |
| 44. | ISPLSI2064VE-200LB100 | 280 MHz 3.3V in-system prommable superFAST high density PLD | LATIC | CPGA | 100 | -55°C | 125°C | 200K |
| 45. | ISPLSI2064VE-280LB100 | 280 MHz 3.3V in-system prommable superFAST high density PLD | LATIC | CPGA | 100 | -55°C | 125°C | 200K |
| 46. | ISPLSI2064VL-100LB100 | 100 MHz 2.5V in-system prommable superFAST high density PLD | LATIC | CPGA | 100 | -55°C | 125°C | 188K |
| 47. | ISPLSI2064VL-165LB100 | 165 MHz 2.5V in-system prommable superFAST high density PLD | LATIC | CPGA | 100 | -55°C | 125°C | 188K |
| 48. | ISPLSI2128VE-100LB100 | 100 MHz 3.V in-system prommable superFAST high density PLD | LATIC | BGA | 100 | -55°C | 125°C | 234K |
| 49. | ISPLSI2128VE-100LB100 | 100 MHz 3.V in-system prommable superFAST high density PLD | LATIC | BGA | 100 | -55°C | 125°C | 234K |
| 50. | ISPLSI2128VE-135LB100 | 135 MHz 3.V in-system prommable superFAST high density PLD | LATIC | BGA | 100 | -55°C | 125°C | 234K |
| 51. | PACUSB100MS | USB upstream port filter with ESD protection | CAMD | MSOP | 8 | 0°C | 70°C | 111K |
| 52. | PB1000/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 53. | PB1001/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 54. | PB1002/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 55. | PB1004/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 56. | PB1006/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 57. | PB1008/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 58. | VHB100-12 | NPN silicon RF power transistor | ADVAN | - | 6 | -65°C | 200°C | 17K |
| 59. | VLB100-12 | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 60. | VMB100-12 | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
