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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 10281. | L8701P | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | SO-8 | 8 | -65°C | 150°C | 42K |
| 10282. | LK701 | 70 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | - | 4 | -65°C | 150°C | 35K |
| 10283. | LK702 | 100 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 10284. | LP701 | 35 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | - | 2 | -65°C | 150°C | 35K |
| 10285. | LP702 | 70 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | - | 2 | -65°C | 150°C | 35K |
| 10286. | LX703 | 100 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | - | 2 | -65°C | 150°C | 37K |
| 10287. | SA701 | 25 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 10288. | SA702 | 50 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 10289. | SC701 | 20 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 37K |
| 10290. | SD702 | 90 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 36K |
| 10291. | SD703 | 110 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 8 | -65°C | 150°C | 37K |
| 10292. | SE701 | 45 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 10293. | SH702 | 90 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 10294. | SH703 | 130 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 10295. | SK701 | 45 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 10296. | SK702 | 90 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 10297. | SK703 | 120 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 35K |
| 10298. | SM703 | 80 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
| 10299. | SM704 | 125 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 10300. | SM705 | 150 Watt, silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 36K |
