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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1SMB2EZ180 | Surface mount silicon zener diode. Nominal zener voltage Vz = 180.0 V. Test current Izt = 2.8 mA | PAJIT | DO-214AA | 2 | -55°C | 150°C | 126K |
| 42. | 1SMB3EZ180 | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 180 V. Test current Izt = 4.2 mA | PAJIT | DO-214AA | 2 | -55°C | 150°C | 128K |
| 43. | 2EZ180 | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 180.0 V. Test current Izt = 2.8 mA. | PAJIT | D0-15 | 2 | -55°C | 150°C | 122K |
| 44. | 2EZ180D5 | 180 V, 2 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 27K |
| 45. | 2EZ18D5 | 18 V, 2 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 27K |
| 46. | 3EZ180 | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 180 V. Izt = 4.2 mA. | PAJIT | D0-15 | 2 | -55°C | 150°C | 461K |
| 47. | 3EZ180 | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 180 V. Izt = 4.2 mA. | PAJIT | D0-15 | 2 | -55°C | 150°C | 461K |
| 48. | 3EZ180D5 | 180 V, 3 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 37K |
| 49. | 3EZ18D5 | 18 V, 3 W, silicon zener diode | EIC | - | 2 | -55°C | 175°C | 37K |
| 50. | AME8817AEDZ180 | Output voltage: 1.80V; 1.5A CMOS LDO | AME | DDPAK | 7 | -40°C | 85°C | 81K |
| 51. | CMDZ18L | 18 V, Low level zener diode | CENTR | SOD | 2 | -65°C | 150°C | 100K |
| 52. | GS8160Z18T-166 | 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 770K |
| 53. | GS8160Z18T-200 | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 770K |
| 54. | GS8160Z18T-225 | 6ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 770K |
| 55. | GS8160Z18T-250 | 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 770K |
| 56. | M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | STM | SOH | 28 | -40°C | 85°C | 503K |
| 57. | M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | STM | SOH | 28 | -40°C | 85°C | 503K |
| 58. | M48Z18-100PC1 | CMOS 8K x 8 zeropower SRAM, 100ns | STM | PCDIP | 28 | 0°C | 70°C | 503K |
| 59. | M48Z18-100PC6 | CMOS 8K x 8 zeropower SRAM, 100ns | STM | PCDIP | 28 | -40°C | 85°C | 503K |
| 60. | Z180 | Zener silicon rectifier. Power dissipation 1 watt. Zener voltage Vz=180V at Izt=1.4mA. Standard tolerance +-20%, suffix A: +-10%. | RECTR | - | 2 | -65°C | 175°C | 17K |
