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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 15KW45A | 45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | MDE | P-600 | 2 | -55°C | 175°C | 166K |
| 42. | 30KW45A | 45.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 166K |
| 43. | AQW454 | PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal. | NAIS | DIP | 8 | -40°C | 85°C | 44K |
| 44. | AQW454A | PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. | NAIS | DIP | 8 | -40°C | 85°C | 44K |
| 45. | AQW454AX | PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. Picked from the 1/2/3/4-pin side. | NAIS | DIP | 8 | -40°C | 85°C | 44K |
| 46. | AQW454AZ | PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. Picked from the 5/6/7/8-pin side. | NAIS | DIP | 8 | -40°C | 85°C | 44K |
| 47. | IW4503BN | Hex buffer, high-voltage silicon-gate CMOS | INTGR | Plastic DIP | 16 | -55°C | 125°C | 176K |
| 48. | IW4516BD | Presettable up/down counter, high-voltage silicon-gate CMOS | INTGR | SOIC | 16 | -55°C | 125°C | 284K |
| 49. | IW4516BN | Presettable up/down counter, high-voltage silicon-gate CMOS | INTGR | Plastic DIP | 16 | -55°C | 125°C | 284K |
| 50. | IW4518BD | Dual up-counter, high-voltage silicon-gate CMOS | INTGR | SOIC | 16 | -55°C | 125°C | 229K |
| 51. | IW4518BN | Dual up-counter, high-voltage silicon-gate CMOS | INTGR | Plastic DIP | 16 | -55°C | 125°C | 229K |
| 52. | IW4518BN | Dual up-counter, high-voltage silicon-gate CMOS | INTGR | Plastic DIP | 16 | -55°C | 125°C | 229K |
| 53. | PHW45NQ10T | 100 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 175°C | 110K |
| 54. | STW45NM50FD | N-CHANNEL 500V 0.07 OHM 45A TO-247 FDMESH POWER MOSFET | STM | - | - | - | - | 255K |
| 55. | STW45NM60 | N-CHANNEL 600V - 0.09 OHM - 45A TO-247 MDMESH POWER MOSFET | STM | - | - | - | - | 256K |
