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Found: 33      Displaying: 21 - 33
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
15KW180180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
22.
15KW180A180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
23.
15KW18A18.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
24.
20KW180180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
25.
20KW180A180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
26.
30KW180180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE
P-600
2
-55°C
175°C
166K
27.
30KW180A180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE
P-600
2
-55°C
175°C
166K
28.
GS8170LW18C-250250MHz 1M x 18 18MB double late write sigmaRAM SRAM
GSITE
BGA
209
0°C
70°C
877K
29.
GS8170LW18C-250I250MHz 1M x 18 18MB double late write sigmaRAM SRAM
GSITE
BGA
209
-40°C
85°C
877K
30.
GS8170LW18C-300300MHz 1M x 18 18MB double late write sigmaRAM SRAM
GSITE
BGA
209
0°C
70°C
877K
31.
GS8170LW18C-300I300MHz 1M x 18 18MB double late write sigmaRAM SRAM
GSITE
BGA
209
-40°C
85°C
877K
32.
GS8170LW18C-333333MHz 1M x 18 18MB double late write sigmaRAM SRAM
GSITE
BGA
209
0°C
70°C
877K
33.
GS8170LW18C-333I333MHz 1M x 18 18MB double late write sigmaRAM SRAM
GSITE
BGA
209
-40°C
85°C
877K
1 2


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