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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 697 Displaying: 481 - 500| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 481. | 28LV64JC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K | | 482. | 28LV64PC-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K | | 483. | 28LV64PC-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K | | 484. | 28LV64PC-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K | | 485. | 28LV64PC-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 42K | | 486. | BDV64A | 80 V, PNP silicon power darlington | TRSYS | SOT | 3 | -65°C | 150°C | 643K | | 487. | BDV64B | 100 V, PNP silicon power darlington | TRSYS | SOT | 3 | -65°C | 150°C | 643K | | 488. | BDV64C | 120 V, PNP silicon power darlington | TRSYS | SOT | 3 | -65°C | 150°C | 643K | | 489. | MT46V64M4FJ-6 | 16 Meg x 4 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM | MICRN | FBGA | 60 | 0°C | 70°C | 152K | | 490. | MT46V64M4FJ-6T | 16 Meg x 4 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM | MICRN | FBGA | 60 | 0°C | 70°C | 152K | | 491. | MT46V64M4FJ-75Z | 16 Meg x 4 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | MICRN | FBGA | 60 | 0°C | 70°C | 152K | | 492. | MT46V64M4TG-6 | 16 Meg x 4 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 152K | | 493. | MT46V64M4TG-6T | 16 Meg x 4 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 152K | | 494. | MT46V64M4TG-75Z | 16 Meg x 4 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 152K | | 495. | MT46V64M8TG-75 | 32Meg x 4 x 4banks, CL=2.5, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M | | 496. | MT46V64M8TG-75L | 32Meg x 4 x 4banks, CL=2.5, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M | | 497. | MT46V64M8TG-75Z | 32Meg x 4 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M | | 498. | MT46V64M8TG-75ZL | 32Meg x 4 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M | | 499. | MT46V64M8TG-8 | 32Meg x 4 x 4banks, CL=2, 100MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M | | 500. | MT46V64M8TG-8L | 32Meg x 4 x 4banks, CL=2, 100MHz double data rate (DDR) SDRAM | MICRN | TSOP | 66 | 0°C | 70°C | 2M |
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