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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | AQV201 | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 40V, load current 500 mA. Tube packing style. | NAIS | - | 6 | -40°C | 85°C | 60K |
| 62. | AQV201 | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 40V, load current 500 mA. Tube packing style. | NAIS | - | 6 | -40°C | 85°C | 60K |
| 63. | AQV201AX | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 40V, load current 500 mA. Tape and reel packing style, picked from the 1/2/3-pin side. | NAIS | - | 6 | -40°C | 85°C | 60K |
| 64. | AQV201AZ | PhotoMOS relay, HF (high function) type [1-channel (form A0 type]. Load voltage 40V, load current 500 mA. Tape and reel packing style, picked from the 4/5/6-pin side. | NAIS | - | 6 | -40°C | 85°C | 60K |
| 65. | BS616LV2015AC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 233K |
| 66. | BS616LV2015AI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 233K |
| 67. | BS616LV2018AC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 220K |
| 68. | BS616LV2018AI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 220K |
| 69. | BS616LV2018DC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | 0°C | 70°C | 220K |
| 70. | BS616LV2018DI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | DICE | 48 | -40°C | 85°C | 220K |
| 71. | BS616LV2018TC | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | 0°C | 70°C | 220K |
| 72. | BS616LV2018TI | 70ns 16mA 2.4-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit | BSI | TSOP | 48 | -40°C | 85°C | 220K |
| 73. | EDI9LC644V2010BC | SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM | WHITE | MO-163 | 153 | - | - | 1M |
| 74. | EDI9LC644V2012BC | SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM | WHITE | MO-163 | 153 | - | - | 1M |
| 75. | WED9LC6416V2010BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | WHITE | BGA | 153 | -40°C | 85°C | 370K |
| 76. | WED9LC6416V2010BI | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | WHITE | BGA | 153 | - | - | 370K |
| 77. | WED9LC6416V2012BC | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | WHITE | BGA | 153 | -40°C | 85°C | 370K |
| 78. | WED9LC6416V2012BI | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | WHITE | BGA | 153 | - | - | 370K |
| 79. | WED9LC6816V2010BC | 3.3V power supply; 256K x 32 SSRAM / 4M x 32 SDRAM. External memory solution for Texas instruments TMS320C6000 DSP | WHITE | BGA | 153 | -40°C | 85°C | 400K |
| 80. | WED9LC6816V2012BC | 3.3V power supply; 256K x 32 SSRAM / 4M x 32 SDRAM. External memory solution for Texas instruments TMS320C6000 DSP | WHITE | BGA | 153 | -40°C | 85°C | 400K |
