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Found: 1532      Displaying: 1441 - 1460
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1441.
BAV100General purpose diode. Repetitive peak reverse voltage 60 V.
PHLPS
SOD80C
2
0°C
175°C
47K
1442.
BAV101General purpose diode. Repetitive peak reverse voltage 120 V.
PHLPS
SOD80C
2
0°C
175°C
47K
1443.
BAV102High Voltage, General Purpose Diode
FAIR
-
-
-
-
26K
1444.
BAV102General purpose diode. Repetitive peak reverse voltage 200 V.
PHLPS
SOD80C
2
0°C
175°C
47K
1445.
BAV103High Voltage, General Purpose Diode
FAIR
-
-
-
-
25K
1446.
BAV103General purpose diode. Repetitive peak reverse voltage 250 V.
PHLPS
SOD80C
2
0°C
175°C
47K
1447.
BAV105High-speed diode. Repetitive peak reverse voltage 60 V.
PHLPS
SOD80C
2
0°C
200°C
38K
1448.
BYV10-20Schottky barrier diode. Repetitive peak reverse voltage 20 V.
PHLPS
SOD81
2
0°C
125°C
26K
1449.
BYV10-30Schottky barrier diode. Repetitive peak reverse voltage 30 V.
PHLPS
SOD81
2
0°C
125°C
26K
1450.
BYV10-30Schottky barrier diode. Repetitive peak reverse voltage 30 V.
PHLPS
SOD81
2
0°C
125°C
26K
1451.
BYV10-40Schottky barrier diode. Repetitive peak reverse voltage 40 V.
PHLPS
SOD81
2
0°C
125°C
26K
1452.
EDI8L24129V10BC10ns; 3.3V power supply; 128K x 24 SRAM
WHITE
BGA
119
0°C
70°C
143K
1453.
KM416V1004AJ-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
SMSNG
SOJ
42
0°C
70°C
1M
1454.
KM416V1004AJ-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
SMSNG
SOJ
42
0°C
70°C
1M
1455.
KM416V1004AJ-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
SMSNG
SOJ
42
0°C
70°C
1M
1456.
KM416V1004AJ-L73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
SMSNG
SOJ
42
0°C
70°C
1M
1457.
KM416V1004AT-73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
SMSNG
TSOP II
44
0°C
70°C
1M
1458.
KM416V1004AT-F73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
SMSNG
TSOP II
44
0°C
70°C
1M
1459.
TMBYV10-40FILMSMALL SIGNAL SCHOTTKY DIODES
STM
-
-
-
-
82K
1460.
TMBYV10-60FILMSMALL SIGNAL SCHOTTKY DIODE
STM
-
-
-
-
76K
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