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Found: 1532      Displaying: 1081 - 1100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1081.
BS616LV1010AC70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
44
0°C
70°C
216K
1082.
BS616LV1010AI70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
44
0°C
85°C
216K
1083.
BS616LV1010EC70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
TSOP
44
0°C
70°C
216K
1084.
BS616LV1010EI70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
TSOP
44
0°C
85°C
216K
1085.
BS616UV1010AC150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
48
0°C
70°C
216K
1086.
BS616UV1010AI150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
48
-40°C
85°C
216K
1087.
BS616UV1010CI150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
BGA
48
-40°C
85°C
216K
1088.
BS616UV1010EC150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
TSOP
44
0°C
70°C
216K
1089.
BS616UV1010EI150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
BSI
TSOP
44
-40°C
85°C
216K
1090.
MBV109T130 V, silicon epicap diode
LRC
SOT-23
3
-
-
146K
1091.
MMBV105GLT130 V, silicon tuning diode
LRC
SOT-23
3
-
-
52K
1092.
MMBV109LT130 V, silicon epicap diode
LRC
SOT-23
3
-
-
146K
1093.
NFV10D102KVaristor. Max. allowable voltage: ACrms=625V, DC=825V. Varistor voltage 900-1100V.
CRMT
-
2
-40°C
85°C
60K
1094.
NFV10D112KVaristor. Max. allowable voltage: ACrms=680V, DC=895V. Varistor voltage 990-1210V.
CRMT
-
2
-40°C
85°C
60K
1095.
NFV10D182KVaristor. Max. allowable voltage: ACrms=1000V, DC=1465V. Varistor voltage 1700-1980V.
CRMT
-
2
-40°C
85°C
60K
1096.
NFV10D821KVaristor. Max. allowable voltage: ACrms=510V, DC=670V. Varistor voltage 738-902V.
CRMT
-
2
-40°C
85°C
60K
1097.
NFV10D911KVaristor. Max. allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V.
CRMT
-
2
-40°C
85°C
60K
1098.
PEEL22LV10AZJ-25CMOS programmable electrically erasable logic device, 25ns
ICT
PLCC
28
0°C
70°C
135K
1099.
PEEL22LV10AZJI-35CMOS programmable electrically erasable logic device, 35ns
ICT
PLCC
28
-40°C
85°C
135K
1100.
PEEL22LV10AZT-25CMOS programmable electrically erasable logic device, 25ns
ICT
TSSOP
24
0°C
70°C
135K
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