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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
21. | HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | FAIR | - | - | - | - | 204K |
22. | HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | INTRS | - | - | - | - | 168K |
23. | HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | FAIR | - | - | - | - | 143K |
24. | HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | INTRS | - | - | - | - | 134K |
25. | HGTP7N60B3D | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | INTRS | - | - | - | - | 94K |
26. | HGTP7N60C3D | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | FAIR | - | - | - | - | 311K |
27. | K4S643232E-TP70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | SMSNG | TSOP II | 86 | -45°C | 85°C | 100K |
28. | K4S643232F-TP70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | SMSNG | TSOP II | 86 | -40°C | 85°C | 99K |
29. | K6T0808C1D-TP70 | 70ns, 32Kx8 bit low power CMOS static RAM | SMSNG | TSOP1F | 28 | -40°C | 85°C | 170K |
30. | MTP75N03HDL | HDTMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 175°C | 235K |
31. | MTP75N06HD | HDTMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 175°C | 275K |
32. | MTP7N20E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 223K |
33. | STP75NF75 | N-CHANNEL 75V - 0.0095 OHM - 80A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET | STM | - | - | - | - | 473K |
34. | STP75NF75FP | N-CHANNEL 75V - 0.0095 OHM - 80A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET | STM | - | - | - | - | 473K |
35. | STP7NB60KD | N-CHANNEL 7A - 600V TO-220/TO-220FP/D2PAK POWERMESH IGBT | STM | - | - | - | - | 351K |
36. | STP7NC40 | N-CHANNEL 400V 0.75 OHM 6A TO-220 POWERMESH II MOSFET | STM | - | - | - | - | 244K |
37. | STP7NC70Z | N-CHANNEL 700V - 1.1 OHM - 6A TO-220/FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET | STM | - | - | - | - | 529K |
38. | VTP7110 | Process photodiodes | PERK | - | 2 | -40°C | 110°C | 26K |
39. | VTP7210 | Process photodiode. Isc = 7 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | PERK | - | 2 | -40°C | 85°C | 26K |
40. | VTP7840 | Process photodiode. Isc = 70 microA(typ), Voc = 325 mV at H = 100 fc, 2850 K. | PERK | Lensed sidelooker | 2 | -40°C | 85°C | 26K |