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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 181      Displaying: 81 - 100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
81.
HGTP12N60A4600V, SMPS Series N-Channel IGBT
INTRS
-
-
-
-
115K
82.
HGTP12N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
394K
83.
HGTP1N120CN6.2A, 1200V, NPT Series N-Channel IGBT
INTRS
-
-
-
-
77K
84.
HGTP1N120CND6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
80K
85.
MTP10N10ETMOS IV power field effect transistor
MOT
-
4
-65°C
150°C
237K
86.
MTP10N10ELLogic level TMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
221K
87.
MTP10N40ETMOS E-FET high energy power FET
MOT
-
4
-65°C
150°C
249K
88.
MTP10N40ETMOS E-FET high energy power FET
MOT
-
4
-65°C
150°C
249K
89.
MTP12N10ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
170°C
239K
90.
MTP12P10Power field effect transistor
MOT
-
4
-65°C
150°C
190K
91.
MTP1302HDTMOS E-FET high density power FET
MOT
-
4
-55°C
150°C
166K
92.
MTP1306HDTMOS E-FET high density power FET
MOT
-
4
-55°C
150°C
171K
93.
MTP1306HDTMOS E-FET high density power FET
MOT
-
4
-55°C
150°C
171K
94.
MTP15N06VTMOS V power field effect transistor
MOT
-
4
-55°C
175°C
163K
95.
MTP15N06VLTMOS V power field effect transistor
MOT
-
4
-55°C
175°C
216K
96.
MTP15N06VLTMOS V power field effect transistor
MOT
-
4
-55°C
175°C
216K
97.
MTP1N100ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
203K
98.
MTP1N50ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
159K
99.
MTP1N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
232K
100.
MTP1N80ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
221K
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